H7N0307AB silicon n channel mos fet high speed power switching ade-208-1568a (z) 2nd. edition aug. 2002 features ? low on-resistance ? r ds(on) = 4.6 m ? typ. ? low drive current ? 4.5 v gate drive device can be driven from 5 v source outline to-220ab 1 2 3 1. gate 2. drain (frange) 3. source d g s
H7N0307AB rev.1, aug. 2002, page 2 of 10 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 60 a drain peak current i d(pulse) note 1 240 a body-drain diode reverse drain current i dr 60 a channel dissipation pch note 2 90 w channel to case thermal impedance ch-c 1.39 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25c
H7N0307AB rev.1, aug. 2002, page 3 of 10 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30??v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? i g = 100 a, v ds = 0 gate to source leak current i gss ??10 av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ??10 av ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.5 v i d = 1 ma, v ds = 10 v note 1 static drain to source on state r ds(on) ?4.65.8m ? i d = 30 a, v gs = 10 v note 1 resistance ? 8.0 11.5 m ? i d = 30 a, v gs = 4.5 v note 1 forward transfer admittance |y fs |4065?s i d = 30 a, v ds = 10 v note 1 input capacitance ciss ? 2500 ? pf v ds = 10 v output capacitance coss ? 650 ? pf v gs = 0 reverse transfer capacitance crss ? 350 ? pf f = 1 mhz total gate charge qg ? 40 ? nc v dd = 10 v gate to source charge qgs ? 7 ? nc v gs = 10 v gate to drain charge qgd ? 8 ? nc i d = 60 a turn-on delay time t d(on) ?20?nsv gs = 10 v, i d = 30 a rise time t r ? 300 ? ns r l =0.33 ? turn-off delay time t d(off) ?70?nsr g = 4.7 ? fall time t f ?20?ns body?drain diode forward voltage v df ?0.92?v i f = 60 a, v gs = 0 body?drain diode reverse recovery time t rr ?60?nsi f = 60 a, v gs = 0 dif/ dt = 50 a/ s notes: 1. pulse test
H7N0307AB rev.1, aug. 2002, page 4 of 10 main characteristics drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics 50 40 30 20 10 0 246810 50 40 30 20 10 0 1234 5 tc = 75 c 25 c -25 c 100 10 1 0.1 0.01 0.1 0.3 1 3 10 30 100 v = 10 v pulse test ds 500 tc = 25 c 1 shot pulse pw = 1 0 ms 10 s 100 s operation in this area is limited by r ds(on) dc operation 1 ms v = 2.5 v gs 10v 4.5 v 3.5 v pulse test 3 v 160 120 80 40 0 50 100 150 200 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating
H7N0307AB rev.1, aug. 2002, page 5 of 10 gate to source voltage v (v) gs drain to source voltage v (v) ds(on) drain to source saturation voltage vs. gate to source voltage drain current i (a) d drain to source on state resistance r (m ) ? ds(on) static drain to source on state resistance vs. drain current case temperature tc ( c) static drain to source on state resistance static drain to source on state resistance vs. temperature forward transfer admittance |yfs| (s) drain current i (a) d forward transfer admittance vs. drain current 0.20 0.16 0.12 0.08 0.04 0 4 8 12 16 20 20 10 2 5 1 0.5 2 5 20 50 20 16 12 8 4 -40 0 40 80 120 160 0 pulse test i = 10 a d 2 a 5 a 0.1 1 10 100 0.2 100 50 v = 4.5 v gs 10 v pulse test r (m ) ? ds(on) i = 2 a, 5 a, 10 a d 2 a, 5 a, 10 a v = 4.5 v gs 10 v pulse test 330 0.1 1 10 100 0.3 10 100 30 1 0.3 3 0.1 tc = -25 c ds v = 10 v pulse test 75 c 25 c
H7N0307AB rev.1, aug. 2002, page 6 of 10 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage 01020304050 10000 3000 1000 300 100 30 10 ciss coss crss v = 0 f = 1 mhz gs 50 40 30 20 10 0 20 16 12 8 4 20 40 60 80 100 0 i = 60 a d v gs v ds v = 25 v 10 v 5 v dd v = 25 v 10 v 5 v dd gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics 0.1 0.3 1 3 10 30 100 1000 500 100 200 20 50 10 di / dt = 50 a / s v = 0, ta = 25 c gs reverse drain current i (a) dr reverse recovery time trr (ns) body-drain diode reverse recovery time 100 200 20 10 0.1 0.2 2 10 100 20 1 drain current i (a) d switching time t (ns) switching characteristics 0.5 5 500 50 50 5 v = 10 v , v = 10 v rg = 4.7 , duty < 1 % gs ds ? r t d(on) t d(off) t t f
H7N0307AB rev.1, aug. 2002, page 7 of 10 pulse width pw (s) normalized transient thermal impedance vs. pulse width source to drain voltage v (v) sd reverse drain current i (a) dr normalized transient thermal impedance s (t) 100 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 reverse drain current vs. souece to drain voltage pulse test 5 v v = 0 gs 10 v 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot p ulse dm p pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 1.38 c/ w, tc = 25 c
H7N0307AB rev.1, aug. 2002, page 8 of 10 vin monitor d.u.t. vin 10 v r l v = 10 v ds tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg
H7N0307AB rev.1, aug. 2002, page 9 of 10 package dimensions 0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?0.1 3.6 +0.1 ?0.08 hitachi code jedec jeita mass (reference value) to-220ab conforms conforms 1.8 g as of january, 2002 unit: mm
H7N0307AB rev.1, aug. 2002, page 10 of 10 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2002. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-6538-6533/6538-8577 fax : <65>-6538-6933/6538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-2735-9218 fax : <852>-2730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 6.0
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